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Numerical simulation of laser annealing of a thin amorphous silicon film for solar cells

Abstract

Numerical simulation of laser annealing of a thin amorphous silicon film for solar cells

SayenkoA.V., Paliy A.V., Belousov E.P., Khandygo A.D., Malofeev A.N.

Incoming article date: 28.05.2018

Numerical modeling of the temperature distribution during heating (annealing) by a pulsed Nd: YAG laser of an amorphous silicon (a-Si) film on the surface of an AZO glass substrate is carried out. The simulation was performed on the basis of a numerical solution of the heat equation in the Matlab program to determine the energy density of the laser radiation necessary for crystallization of the a-Si film. For a wavelength of 1064 nm, it was obtained that the temperature at the surface of the a-Si film reaches a maximum value at a time point of 146 ns with a laser pulse with a Gaussian time-shape. It is shown that for the crystallization of an a-Si film with a thickness of about 800 nm with laser radiation with a nanosecond pulse duration, the optimum energy density is 600-700 mJ / cm2 when the temperature across the thickness of the a-Si film corresponds to 550-1250 ° C.

Keywords: Numerical simulation, laser annealing, temperature distribution, a-Si film, solar cell