The influence of deep energy levels on the gas sensitivity's coefficient of conductometric gas sensors
Abstract
The influence of deep energy levels on the gas sensitivity's coefficient of conductometric gas sensors
Incoming article date: 13.12.2014A method of prognosis of gas sensitivity's coefficient of conductometric gas sensors with sensitive layer which is based on a semiconductor with deep energy levels in the fobidden zone was developed. As a result it was found out that deep energy levels can cause a significant increasing of gas sensitivity's coefficient as well as influence on the chemosorptive properties of sensitive layer.
Keywords: Сonductometric gas sensor, gas sensitivity, sensitive layer, semiconductor, deep-lying levels.