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Effect of a Magnetic Field on Impurity Light Absorption Spectra of 1D Semiconductor Structures

Abstract

Effect of a Magnetic Field on Impurity Light Absorption Spectra of 1D Semiconductor Structures

Kalinin E.N., Kalinina A.V.

Incoming article date: 08.01.2022

A periodic semiconductor structure is considered, consisting of tunnel-uncoupled quantum wires (QW) based on InSb containing impurity centers. The uniform magnetic field is directed along the QW axis. For the case of light polarization transverse with respect to the QW axis in the framework of the dipole approximation, in the effective mass approximation, an analytical expression for the impurity absorption coefficient of light is obtained taking into account the dispersion of the QW radius described by the Gauss function. It is shown that on the spectral curve constructed in the Maple program, for given parameters of the QW and the semiconductor structure, there is a sequence of resonant maxima with a doublet structure. The cyclotron frequency determines the distance between the maxima in the doublet, and the frequency of the doublets on the spectral curve is determined by the hybrid frequency. With an increase in the magnetic field, the dynamics of the edge of the impurity absorption band is observed, which can be used to create detectors of optical radiation in a wide range of wavelengths and will make it possible to identify such semiconductor structures. It is also possible to obtain valuable information about the parameters of the QW and the band structure of the semiconductor from the spectral curve

Keywords: impurity absorption coefficient, quantum wire, low-dimensional semiconductor structures, impurity center