The Electrically Active Impurities Inhomogeneous Distribution Influence on The Charge Carriers Transfer in Metal-semiconductor Contacts with Schottky Barrier
Abstract
The Electrically Active Impurities Inhomogeneous Distribution Influence on The Charge Carriers Transfer in Metal-semiconductor Contacts with Schottky Barrier
Incoming article date: 13.08.2013The mathematical model and the simulation of metal-semiconductor contacts with Schottky barrier volt-ampere characteristics taking into account electrically active impurities inhomogeneous distribution in semiconductor are proposed in this work. The developed mathematical model takes into account quantum mechanical effects during the charge carriers transfer in metal-semiconductor junctions with Schottky barrier and allows forecasting their volt-ampere characteristics. The simulation results meet the experimental data from famous literary sources. The developed mathematical model can be used in computer aided design of integrated circuits elements.
Keywords: Schottky diode, potential, Poisson equation, volt-ampere characteristic