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Formation of Island Nanostructures by Sublimation Epitaxy in Electronic Technology


Formation of Island Nanostructures by Sublimation Epitaxy in Electronic Technology

Blagin A.V., Lozovsky S.V., Popova I.G., Nefedov V.V., Nefedova N.A.

Incoming article date: 29.07.2023

The possibilities of a little-studied method for obtaining nanosized materials of electronic engineering with a given substructure, the zone sublimation epitaxy (ZSE) method, are discussed. In the work, it is combined with the method of gradient liquid phase epitaxy (GLE). A specific feature is mass transfer in a two-phase medium (a solid substrate and an inert gas phase acting as a transport medium) with preliminary deposition of a matrix layer formed from the melt. A feature of the sublimation process in the study was the crystallization of low-melting iron-silicon eutectic. A mathematical model of the process was proposed and compared with the experimental results. Island structures of the composition silicon (more than 90%), iron (up to 8%) and chromium (about 1.5%) have been obtained. Their parameters and size distribution were studied. A Solver-HV scanning probe microscope and a Quanta-200 scanning electron microscope were used. The study shows that the use of sublimation transfer transients makes it possible to reproducibly form doped silicon nanolayers and transform them into regular mesostructures.

Keywords: microsize growth cell method, zone sublimation epitaxy, gradient liquid phase epitaxy, island nanostructures