Research of processes of sapphire and glassy dielectric juncture formation

Abstract

Research of processes of sapphire and glassy dielectric juncture formation

Klunnikova Yu.V.

Incoming article date: 08.04.2016

The technological scheme of sapphire and glassy dielectric PbO – B2O3 – ZnO juncture formation is suggested. The centrifugation method was used for sapphire and glassy dielectric PbO – B2O3 – ZnO juncture formation. It allows to form uniform films with thickness of units to tens of microns. Researches of the received films surface morphology were made by method of atomic force microscopy.

Keywords: sapphire, glassy dielectric, technological process.