Developing a model for calculation of the stress-strain states in semiconductor structures due to laser processing

Abstract

Developing a model for calculation of the stress-strain states in semiconductor structures due to laser processing

I.V. Kulikova

Incoming article date: 26.05.2014

A model is presented for the calculation of thermoelastic stress and displacement  in semiconductor structures
due to laser processing. Developed software based on the model allows to determine the optimal parameters of laser processing with taking into account the physical and topological parameters of the structure. The model is divided into two tasks: the non-stationary heat  conduction equation is solved, and the equilibrium equations and Hooke's law. For equations solution was used the finite difference method.

Keywords: Laser processing, thermal stress, finite difference method