The paper studies the liquid-phase epitaxy processes of a new material of infrared optoelectronics - indium arsenide doped with bismuth using a stepwise thermal field. An analysis of the phase equilibrium during the growth of a solid solution is carried out. The possibility of the formation of a mesostructure (modulation of the composition along the growth coordinate) is shown. The problems of defect formation in composite layers grown from a melt are considered. Ways of decreasing the dislocations density in gradient layers are discussed. A relatively simple method for controlling the thermal field of temperature in the crystallization zone and a new technological procedure for the sequential crystallization of solid solutions with a mesostructure have been developed.

Keywords: solid solutions, liquid-phase epitaxy, indium arsenide, mesostructure, stepwise thermal field, dislocation generation

In this work, we simulated the graphene-MnO composite structure based on minimizing the electron density functional. The analysis of the processes of rearrangement of the interface surface SLG (monolayer of graphene) - MnО (111). In this case, the interface was subjected to hydrogenation. The distribution of the effective charge on graphene is investigated. A decrease in the work function of the charge carriers during hydrogenation of the interface is established.

Keywords: effective charge, graphene, passivated surface, density functional, interface, work function, energy gap, band structure