The results of a theoretical and experimental study of the synthesis of GaInAsBi thin-film structures formed on InAs substrates in the field of a temperature gradient are discussed. The features of interfacial interaction in the In-As-Sb system in the presence of isovalent solvents (In, Bi) have been studied. The values of the interaction parameters and the distribution coefficients of the system components are determined. Optimal technological modes for obtaining InAs-based heterostructures are presented. The properties of the surface of epitaxial layers are studied experimentally. It was found that the main control parameters are the temperature of thermomigration and its gradient. It is shown that the synthesized semiconductor materials can be effectively used in electronic devices of a new generation - electro-optical modulators and supersensitive sensor elements.
Keywords: epitaxial structure, crystallization, recrystallization, melt, segregation coefficient, organometallic compound, voltage sensitivity, near infrared range, solid solution, optical characteristic
The paper studies the liquid-phase epitaxy processes of a new material of infrared optoelectronics - indium arsenide doped with bismuth using a stepwise thermal field. An analysis of the phase equilibrium during the growth of a solid solution is carried out. The possibility of the formation of a mesostructure (modulation of the composition along the growth coordinate) is shown. The problems of defect formation in composite layers grown from a melt are considered. Ways of decreasing the dislocations density in gradient layers are discussed. A relatively simple method for controlling the thermal field of temperature in the crystallization zone and a new technological procedure for the sequential crystallization of solid solutions with a mesostructure have been developed.
Keywords: solid solutions, liquid-phase epitaxy, indium arsenide, mesostructure, stepwise thermal field, dislocation generation
In this work, we simulated the graphene-MnO composite structure based on minimizing the electron density functional. The analysis of the processes of rearrangement of the interface surface SLG (monolayer of graphene) - MnО (111). In this case, the interface was subjected to hydrogenation. The distribution of the effective charge on graphene is investigated. A decrease in the work function of the charge carriers during hydrogenation of the interface is established.
Keywords: effective charge, graphene, passivated surface, density functional, interface, work function, energy gap, band structure