The paper presents the results obtained after study of the effects produced by differently oriented electric fields upon the electronic structure and spin-polarized transport in 1D graphene channel placed on wide bandgap semiconductor of the А3В5 type. Ab initio calculations of total energy and band structure have been performed within the framework of the density functional theory using Grimme's DFT(PBE)-D2 scheme. It has been demonstrated that carrier mobility in a 1D semiconductor channel of the ZGNR/А3В5(0001) type may reach the values of (1.7-30.5).10^4 cm^2/Vs and can be controlled using electric field.

Keywords: graphene nanoribbons, nitride aluminum, ab initio, semiconductor, electric field, band structure, density functional theory, transport properties, electronic properties.