The improvement of methods of electronic devices simulation is currently ongoing, so development the tests for these methods is the actual task at the present time. The goal of this paper is to develop the original test problem for efficiency assessment of numerical methods of ordinary differential equations solving and methods of numerical analysis of transients in electronic circuits and systems. The test problem is presented as mathematical model and electronic circuit too. Test problem and technique of estimation of numerical analysis algorithms’ accuracy proposed in the present paper can be used in circuit simulators and in computer mathematics programs to test both known and new simulation methods for electronic circuits and systems with various dynamics, including stiff and/or nonlinear circuits.

Keywords: numerical methods, electronic circuits, transient analysis, ordinary differential equations, stiff systems

The experimental temperature dependences of the basic MOSFET parameters (the transconductance parameter and threshold voltage) in a wide temperature range covering both cryogenic temperature and regular temperatures are considered. The methods which acceptable for engineering practice and allow to approximate the experimental temperature dependences of the basic MOSFET parameters by the simple analytical expressions in the form of linear or power functions are presented. The investigated MOSFETs was designed for work as active elements of amplifying devices. Temperature dependences of the basic MOSFET parameters are needed for estimation of the sensitivity, prediction of uptime and optimizing the choice of refrigerant for low-noise amplifiers.

Keywords: MOSFET, transconductance parameter, threshold voltage, temperature dependencies, approximation, cryogenic temperatures